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GSI PECVD

GSI Plasma Enhanced Chemical Vapor Deposition System

GSI PECVD
Manager: Phil Infante
Backup: Dan Woodie

Description:

The load-locked GSI Plasma Enhanced Chemical Vapor Deposition (PECVD) system can conformally deposit a variety of dielectric films as well amorphous silicon on whole 100 and 150 mm diameter wafers. Dual frequency RF power supply allows tuning of the film stress. The deposition temperature can be varied from 200 - 400 °C. Deposition rates range from 100 - 400 nm/min

Processes Available:

  • TEOS based silicon oxide: normal & low stress
  • Silicon oxide
  • Silicon nitride: stoichiometric & low stress
  • Amorphous silicon: doped and undoped
  • Oxynitrides: 1.46 - 2.0 refractive index range


Additional Resources:

GSI instructions 9_20_02 update
Process Data 6_22_05 update.xls


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This material is based upon work supported by the National Science Foundation under Grant No. ECS-0335765. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

Cornell NanoScale Science & Technology Facility (CNF)
250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700
Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu
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